Ka-band 1-W PHEMT MMIC POWER AMPLIFIERS ON 2MIL-THICK GaAs SUBSTRATES

نویسندگان

  • C. W. Huang
  • S. J. Chang
  • W. Wu
  • C. L. Wu
  • C. S. Chang
چکیده

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB output return loss. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 181–185, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20764

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تاریخ انتشار 2005